The third generation semiconductor is the key of electronic semiconductor materials

Semiconductor materials have different characteristics according to different substances, anti vibration table so the first generation, the second generation, the third generation of semiconductors are different. Silicon is the most widely used because it is easy to obtain, and other elements such as germanium are also used.

These single-element semiconductors are also known as "first-generation semiconductors" and "elemental semiconductors." semiconductor test Semiconductors consisting of two or more elements are called "compound semiconductors" and can be divided into second - and third-generation semiconductors.

Also remind everyone that algebraic update does not mean that the previous generation will be eliminated, but will produce different application scenarios according to different physical characteristics.

As can be seen from the above picture, all kinds of semiconductors have their suitable scenarios, voltage probe such as gallium arsenide, which is mostly used in RF components, among which we use mobile phones as a relatively large number of applications, so when the demand for consumer electronics is weak, relevant concept stocks are affected, and in the Type-C supply chain issues, The main problem is that gallium nitride is characterized by high temperature resistance and high frequency operation, so the current product applications in China are mostly used in people's livelihood consumer needs such as economic fast charging and power management, and silicon carbide is suitable for use in inverters because of its high temperature and high pressure resistance, which not only drives the trend of power supply and industrial applications, but also drives the trend of power supply and industrial applications. It is also a key component of electric vehicles, making many countries regard it as a strategic material.

Long crystal substrate technology is difficult, and many countries regard it as a strategic material

The manufacture of silicon wafers mainly includes crystal refining, dissolution, purification, distillation to form crystal rods, and then slicing and polishing to form wafers.

The process by which a crystal grows into a rod is called long crystal. For example, silicon carbide produces silicon carbide rods, and silicon crystals produce silicon rods.

Epitaxy: The technology of growing new crystals on a wafer to form a semiconductor layer, and the epitaxy wafer is handed over to a wafer foundry to manufacture the wafer.

However, the SiC substrate long crystal technology is quite difficult, for example, when the silicon rod can grow 200 cm high crystal rod in only 3 days, but the SiC substrate only grows 2 to 5 cm in 7 days.

The high technical difficulty also means high production costs, and without a substrate, it cannot epitaxial the production of SIC chips.

At present, SiC substrate is regarded as a strategic material, and it is not easy to obtain large quantities.

At present, Changjiang technology is mainly in the hands of large foreign factories such as Kerry (now Wolfspeter) and ROM, and Taiwan factories are relatively backward

However, there is little difference between SiC epitaxy and wafer foundry and general semiconductor processes, so whether the Taiwan factory can master crystal growth technology is the most important key technology.

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